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ArticleOpen Access http://dx.doi.org/10.26855/oajrcms.2025.06.002

A Perspective of Recent Progress in Zn3P2 (II-V) Diluted Magnetic Semiconductors for Spintronic Applications

Nakka Praveenkumar1, K. V. Madhuri1,*, Nasina Madhusudhana Rao2, Lakshmi Rajesh Chebrolu3, G Chinna Venkata Subbaiah4, Anjali Bhattacharyya2, Anju Babu2, Ch. Linga Raju5

1Thin Film Research Center, Department of Physics, Vignan's Foundation for Science, Technology & Research (Deemed to be University), Vadlamudi, Guntur (Dt), Andhra Pradesh 522213, India.

2Department of Physics, School of Advanced Sciences, VIT-AP University, Inavolu, Beside AP Secretariat, Amaravati, Andhra Pradesh 522237, India.

3MLR Institute of Technology, Hyderabad, Telangana 500043, India.

4Department of Physics, Annamacharya University, Rajampet, Andhra Pradesh 516126, India.

5Department of Physics, Acharya Nagarjuna University, Nagarjuna Nagar, Andhra Pradesh 522510, India.

*Corresponding author: K. V. Madhuri

Published: October 21,2025

Abstract

Recently, the addition of impurities or dopants has significantly altered the properties of Zn₃P₂. Doping has led to enhancements in various applications, including electrical, spintronic, optoelectronic devices, and lithium-ion batteries. Due to its direct band gap energy, luminescence, and room-temperature ferromagnetic behavior, Zn₃P₂ has shown improved performance in different forms such as single crystals, thin films, powders, and nanostructures. This review highlights the current theoretical and experimental understanding of ferromagnetism in Zn₃P₂ and other II-V diluted magnetic semiconductors, with a particular focus on the properties of Zn₃P₂-based diluted magnetic semiconductors. The transition elements influence the host (Zn3P2) system and magnetic order at low dopant concentrations. We explained the Zn3P2 system's theoretical and experimental studies on how it is influenced by spintronic applications. We talk about the various uses of the Zn3P2 system in the future as well as the impacts of magnetic interactions. Moreover, we discussed recent literature on Zn3P2 and its results, with the key directions of development, serving as beginning, an orientation, and stim-ulation for upcoming research.

Keywords

Magnetism; Semiconductors; Spintronic materials; Zn3P2 system and II-V alloy

References

[1] Dietl T. A ten-year perspective on dilute magnetic semiconductors and oxides. Nat Mater. 2010;9:965-74. doi:10.1038/nmat2898.

[2] Dietl T. Origin of ferromagnetic response in diluted magnetic semiconductors and oxides. J Phys Condens Matter. 2007;19:165204. doi:10.1088/0953-8984/19/16/165204.

[3] Dietl T, Ohno H. Dilute ferromagnetic semiconductors: Physics and spintronic structures. Rev Mod Phys. 2014;86:187-251. doi:10.1103/RevModPhys.86.187.

[4] Dietl T. Origin of ferromagnetic response in diluted magnetic semiconductors and oxides. J Phys Condens Matter. 2007;19:165204. doi:10.1088/0953-8984/19/16/165204.

[5] Sathyamoorthy R, Sharmila C, Natarajan K, Velumani S. Influence of annealing on structural and optical properties of Zn3P2 thin films. Mater Charact. 2007;58:745-9. doi:10.1016/j.matchar.2006.11.015.

[6] Soliman M, Kashyout AB, Osman M, El-Gamal M. Electrochemical deposition of Zn3P2 thin film semiconductors on tin oxide substrates. Renew Energy. 2005;30:1819-29. doi:10.1016/j.renene.2005.01.004.

[7] Nayak A, Banerjee HD. X-ray photoelectron spectra of Zn3P2-Cd3P2 alloy semiconducting thin films. Mater Chem Phys. 1999;60:95-8. doi:10.1016/S0254-0584(99)00064-4.

[8] El Zawawi IK, Moez AA, Hammad TR, Ibrahim RS. Phase transformation and disorder effect on optical and electrical properties of Zn3P2 thin films. Spectrochim Acta A Mol Biomol Spectrosc. 2012;94:378-83. doi:10.1016/j.saa.2012.03.072.

[9] Bhushan M, Turner JA, Parkinson BA. Photoelectrochemical investigation of Zn3P2. J Electrochem Soc. 1986;133:536. doi:10.1149/1.2108615.

[10] Villars P, Calvert LD. Pearson's handbook of crystallographic data for intermediate phases. American Society of Metals; 1985. doi:10.1557/S0883769400069682.

[11] Jaiganesh G, Jaya SM. Magnetism, electronic structure and half-metallic property of transition metal (V, Cr, Mn, Fe, Co) substituted Zn3P2 dilute magnetic semiconductors: an ab-initio study. Comput Mater Sci. 2015;102:85-94. doi:10.1016/j.commatsci.2015.02.018.

[12] Praveenkumar N, Rao NM. Room temperature ferromagnetism in undoped and Fe doped Zn3P2 nanoparticles: Structural, optical and magnetic properties. Solid State Sci. 2024;151:107519. doi:10.1016/j.solidstatesciences.2024.107519.

[13] Praveenkumar N, Rao NM. Ni doped Zn3P2 nanoparticles: Synthesis, structural, optical, and magnetic properties. J Supercond Nov Magn. 2023;37:1-13. doi:10.1007/s10948-023-06670-w.

[14] Praveenkumar N, Rao NM, Chakravarthi MK. Structural, optical, and magnetic properties of Mn doped Zn3P2 diluted magnetic semi-conductor nanoparticles. ECS J Solid State Sci Technol. 2024;13:054003. doi:10.1149/2162-8777/ad47d1.

[15] Praveenkumar N, Rao NM. Transition metal (Ni, Mn) codoped Zn3P2 nanoparticles: effect on structural, optical and magnetic properties. Nano Express. 2023;4:045009. doi:10.1088/2632-959X/ad0e78.

[16] Praveenkumar N, Rao NM. The effect of Fe and Ni dual-doping on the structural, optical and magnetic properties of Zn3P2 nanoparticles. Appl Phys A. 2024;130:271. doi:10.1007/s00339-024-07413-x.

[17] Praveenkumar N, Rao NM. Synthesis of (Mn, Fe) co-doped Zn3P2 nanoparticles: structural, optical and magnetic properties via sol-id-state reaction route. J Mater Sci Mater Electron. 2024;35:719. doi:10.1007/s10854-024-12512-9.

[18] Stepanchikov DM, Chuiko GP. Excitons into one-axis crystals of zinc phosphide (Zn3P2). Condens Matter Phys. 2009;12:239. doi:10.5488/CMP.12.2.239.

[19] Jaiganesh G, Jaya SM. Half-metallic ferromagnetism in Fe-doped Zn3P2 from first principles calculations. AIP Conf Proc. 2014;1591:1081-3. doi:10.1063/1.4872860.

[20] Sekaran JG, Jaya SM. Effect of partial Ti substitution at Zn sites on the structural, electronic and magnetic properties of Zn3P2. Authorea Preprints. 2020. doi:10.22541/au.160466779.91279508/v1.

[21] Jaiganesh G, Jaya SM. Electronic structure and magnetism of titanium substituted Cd3P2 an ab-initio study. AIP Conf Proc. 2018;1953:030017. doi:10.1063/1.5033127.

[22] Laiho R, Lisunov KG, Lahderanta E, Zakhvalinskii VS. Magnetic MnAs nanoclusters in the diluted magnetic semiconductor (Zn1-xMnx)3As2. J Phys Condens Matter. 1999;11:8697. doi:10.1088/0953-8984/11/44/310.

[23] Laiho R, Lisunov E, Lähderanta V, Zakhvalinskii S. Magnetic properties of the new diluted magnetic semiconductor: evidence of MnAs clusters. J Phys Condens Matter. 1999;11:555. doi:10.1088/0953-8984/11/2/018.

[24] Denissen CJM, Nishihara HV, De Gool JC, Jonge WJM. Magnetic behaviour of the semi magnetic semiconductor (Cd1−xMnx)3As2. Phys Rev B. 1986;33:7637. doi:10.1103/PhysRevB.33.7637.

[25] Jaiganesh G, Jaya SM. Electronic structure and magnetism of titanium substituted Cd3P2 an ab-initio study. AIP Conf Proc. 2018;1953:030017. doi:10.1063/1.5033127.

[26] Catalano A. The growth of large Zn3P2 crystals by vapour transport. J Cryst Growth. 1980;49:681-6. doi:10.1016/0022-0248(80)90294-8.

[27] Kloc K, Żdanowicz W. Growth and morphology of Zn3P2, Cd3P2 and Cd3As2 crystals. J Cryst Growth. 1984;66:451-8.

doi:10.1016/0022-0248(84)90229-X.

[28] Zanin IE, Aleinikova KB, Afanasiev MM, Antipin MY. Structure of Zn3P2. J Struct Chem. 2004;45:844-8. doi:10.1007/s10947-005-0067-9.

[29] Katsube R, Hayashi H, Nagaoka A, Yoshino K, Nose Y, Shirai Y. Growth and characterization of indium-doped Zn3P2 bulk crystals. Jpn J Appl Phys. 2016;55:041201. doi:10.7567/JJAP.55.041201.

[30] Li X, et al. Self-supported Zn3P2 nanowires-assembly bundles grafted on Ti foil as an advanced integrated electrodes for lithium/sodium ion batteries with high performances. J Alloys Compd. 2017;724:932-9. doi:10.1016/j.jallcom.2017.07.016.

[31] Bouzara C, Kaci S, Boukezzata A, Kezzoula F, Bozetine I, Keffous A, Ouadah Y. Study of optical properties of nanocrystalline zinc phosphide thin films. Silicon. 2019;11:331-7. doi:10.1007/s12633-018-9866-4.

[32] Suda T. Zinc phosphide thin films grown by plasma assisted vapour phase deposition. J Cryst Growth. 1990;99:625-9. doi:10.1016/0022-0248(90)90596-D.

[33] Lousa A, Bertran E, Varela M, Morenza JL. Deposition of Zn3P2 thin films by evaporation. Sol Energy Mater. 1985;12:51-6. doi:10.1016/0165-1633(85)90023-1.

[34] Fuke S, Imai T, Kawasaki K, Kuwahara K. Substrate effect on the deposition of Zn3P2 thin films prepared by a hot-wall method. J Appl Phys. 1989;65:564-6. doi:10.1063/1.343142.

[35] Kakishita K, Baba T, Suda T. Zn3P2 thin films grown on glass substrates by MOCVD. Thin Solid Films. 1998;334:25-9.

doi:10.1016/S0040-6090(98)01110-9.

[36] Babu V, Suresh PR, Vaya P, Sobhanadri J. Electrical and thermoelectrically properties of Zn3P2 films grown by the hot wall epitaxy technique. J Appl Phys. 1988;64:1922-6. doi:10.1063/1.341744.

[37] Bryja L, Jezierski K, Ciorga M, Bohdziewicz A, Misiewicz J. Temperature dependence of energy gap of amorphous thin films of Zn3P2. Vacuum. 1998;50:5-7. doi:10.1063/1.341744.

[38] Hermann AM, Madan A, Wanlass MW, Badri V, Ahrenkiel R, Morrison S, Gonzalez C. MOCVD growth and properties of Zn3P2 and Cd3P2 films for thermal photovoltaic applications. Sol Energy Mater Sol Cells. 2004;82:241-52. doi:10.1016/j.solmat.2004.01.021.

[39] Nayak A, Rao DR. Electrical properties of electron-beam-evaporated Zn3P2 and Cd3P2 alloy films. Mater Chem Phys. 1994;37:225-9. doi:10.1016/0254-0584(94)90157-0.

[40] Murali KR. Thickness dependence of dc conductivity of amorphous Zn3P2 films. J Mater Sci Lett. 1986;5:418-20.

doi:10.1007/BF01672347.

[41] Sacken U, Brodie DE. Effects of electron bombardment during vacuum deposition of Zn3P2 films. Can J Phys. 1985;63:757-61.

[42] Haque A, Brodie DE. The preparation and some properties of low resistivity Zn3P2 films prepared using a hot-wall deposition method. Can J Phys. 1989;67:893-5.

[43] Kaur M, et al. Investigation of structural and electronic properties of Zn3P2: Theory and experiment. J Electron Mater. 2016;45:2847-54. doi:10.1007/s11664-016-4455-z.

[44] Pawlikowski JM. Comments on Zn3P2 band structure. J Appl Phys. 1982;53:3639-42. doi:10.1063/1.331146.

[45] Ramos-Sanchez G, et al. Organic molecule-functionalized Zn3P2 nanowires for photochemical H2 production: DFT and experimental analyses. Int J Hydrogen Energy. 2014;39:19887-98. doi:10.1016/j.ijhydene.2014.10.028.


How to cite this paper

A Perspective of Recent Progress in Zn3P2 (II-V) Diluted Magnetic Semiconductors for Spintronic Applications

How to cite this paper: Nakka Praveenkumar, K. V. Madhuri, Nasina Madhusudhana Rao, Lakshmi Rajesh Chebrolu, G Chinna Venkata Subbaiah, Anjali Bhattacharyya, Anju Babu, Ch. Linga Raju. (2025) A Perspective of Recent Progress in Zn3P2 (II-V) Diluted Magnetic Semiconductors for Spintronic Applications. OAJRC Material Science, 7(1), 13-23.

DOI: http://dx.doi.org/10.26855/oajrcms.2025.06.002

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